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Home » For Buyers » Electronics & Electrical» Active Components » Transistors, Diodes & Tubes » 532nm 300-1000mW Green Laser Diode
Beijing LaserWave Optoelectronics Technology Co., Ltd.
Products:532nm 300-1000mW Green Laser Diode
Post Date Jan 03, 2008
Business Category Electronics & Electrical » Active Components » Transistors, Diodes & Tubes
Country/Region China [CN]
Company Address No.1 Jiuxiaoqiao East Road, Chaoyang District, Beijing, China [CN]
Business Type
» RecommendDescription

Wavelength (nm)

532

Output power (mW)

300-1000

Transverse mode

TEM00

Operating mode

CW

Power stability (rms, over 4 hours)

<5%

10%

Warm-up time (minutes)

<15

M2 factor

<2.0

Beam divergence, full angle (mrad)

<2.0

Beam diameter at the aperture (mm)

~3.0

Beam height from base (mm)

29

Spectral line width (nm)

<0.1

Polarization ratio

>100:1

Noise of amplitude (rms)

~30%

Point stability after warm-up (mrad)

<0.05

Operating temperature (℃)

10-35

Expected lifetime (hours)

8000

Dimensions of laser head (mm)

130(L)*72(W)*51.6(H)

Power supply(85-265V)

100(L)*85(W)*38(H)

PCB(Optional, CW/TTL/ Analog mode )

94(L)*64(W)*65(H)

Net weight (laser head & powers) (kg)

3.0

TTL modulation

TTL modulation up to 30kHz

(optional, positive or negative control)

Analog modulation

Analog modulation up to 20kHz

(0~max output when 0-5V signal input)

Warranty time

1 year

Place of Origin China [CN] Currency
Payment Method Minimum Order
Delivery Time Delivery
Packaging Supply Ability
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